IRFHM3911TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta 20A Tc

Drain Current-Max (Abs) (ID) :

3.2A

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

4V

Resistance :

92mOhm

Published :

2013

FET Type :

N-Channel

Continuous Drain Current (ID) :

20A

Rds On (Max) @ Id, Vgs :

115m Ω @ 6.3A, 10V

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

41 mJ

Number of Pins :

8

Power Dissipation-Max :

2.8W Ta 29W Tc

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

36A

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 50V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-30 Code :

S-PDSO-F5

Vgs (Max) :

±20V

Terminal Position :

Dual

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 35μA

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED