IRFH8330TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

25A

Mounting Type :

Surface Mount

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

56A

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

9.2 ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Position :

Dual

Fall Time (Typ) :

5.7 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 20A, 10V

Case Connection :

DRAIN

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Series :

HEXFET®

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

3.3W Ta 35W Tc

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Element Material :

SILICON

Published :

2012

JESD-30 Code :

R-PDSO-F5

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

3.3W

Avalanche Energy Rating (Eas) :

52 mJ

Current - Continuous Drain (Id) @ 25°C :

17A Ta 56A Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 25V

Drain-source On Resistance-Max :

0.0066Ohm

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount