IRFH8324TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Rise Time :

26ns

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Nominal Vgs :

1.8 V

Turn-Off Delay Time :

14 ns

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 20A, 10V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

94 mJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

23A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Vgs (Max) :

±20V

Published :

2012

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

8.5 ns

Drain Current-Max (Abs) (ID) :

50A

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

23A Ta 90A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

13 ns

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

200A

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Power Dissipation :

3.6W

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2380pF @ 10V

Packaging :

Tape and Reel (TR)

Additional Feature :

High Reliability

Power Dissipation-Max :

3.6W Ta 54W Tc

Package / Case :

8-PowerTDFN

Series :

HEXFET®

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Flat