IRFH8318TR2PBF
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- Mfr.Part #
- IRFH8318TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A 5X6 PQFN
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HEXFET®
- Height :
- 1.17mm
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 12 ns
- Width :
- 5mm
- Length :
- 5.85mm
- Drain to Source Breakdown Voltage :
- 30V
- Vgs(th) (Max) @ Id :
- 2.35V @ 50μA
- Supplier Device Package :
- PQFN (5x6)
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 27A
- RoHS Status :
- RoHS Compliant
- Nominal Vgs :
- 1.8 V
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 8
- Published :
- 2008
- Package / Case :
- 8-PowerTDFN
- Drain to Source Voltage (Vdss) :
- 30V
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 18 ns
- Max Power Dissipation :
- 3.6W
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Cut Tape (CT)
- Resistance :
- 3.1mOhm
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 27A Ta 120A Tc
- Input Capacitance :
- 3.18nF
- Rds On (Max) @ Id, Vgs :
- 3.1mOhm @ 20A, 10V
- Radiation Hardening :
- No
- Rise Time :
- 33ns
- Power Dissipation :
- 3.6W
- Recovery Time :
- 24 ns
- Drain to Source Resistance :
- 3.1mOhm
- Threshold Voltage :
- 1.8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3180pF @ 10V
- Rds On Max :
- 3.1 mΩ
- Datasheets
- IRFH8318TR2PBF
N-Channel Cut Tape (CT) 3.1mOhm @ 20A, 10V 3180pF @ 10V 41nC @ 10V 30V 8-PowerTDFN
IRFH8318TR2PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3180pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 27A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 3.1mOhm.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).
IRFH8318TR2PBF Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 3.1mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFH8318TR2PBF Applications
There are a lot of Infineon Technologies
IRFH8318TR2PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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