IRFH8303TRPBF
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- Mfr.Part #
- IRFH8303TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 43A/100A 8PQFN
- Stock
- 5,806
- In Stock ：
- 5,806
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 30V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 2.2V @ 150µA
- Turn-Off Delay Time :
- 48 ns
- REACH SVHC :
- No SVHC
- Drain Current-Max (Abs) (ID) :
- 43A
- Fall Time (Typ) :
- 65 ns
- Turn On Delay Time :
- 21 ns
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 3.7W Ta 156W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®, StrongIRFET™
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 1.7V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 50A, 10V
- Rise Time :
- 91ns
- Power Dissipation :
- 3.7W
- Gate Charge (Qg) (Max) @ Vgs :
- 179nC @ 10V
- Continuous Drain Current (ID) :
- 100A
- Number of Channels :
- 1
- Published :
- 2013
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7736pF @ 24V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 43A Ta 100A Tc
- Datasheets
- IRFH8303TRPBF
N-Channel Tape & Reel (TR) 1.1m Ω @ 50A, 10V ±20V 7736pF @ 24V 179nC @ 10V 8-PowerTDFN
IRFH8303TRPBF Overview
The maximum input capacitance of this device is 7736pF @ 24V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 43A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 21 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.7V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRFH8303TRPBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 48 ns
a threshold voltage of 1.7V
IRFH8303TRPBF Applications
There are a lot of Infineon Technologies
IRFH8303TRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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