IRFH7932TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Package / Case :

8-PowerVDFN

ECCN Code :

EAR99

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Power Dissipation :

3.4W

Drain to Source Breakdown Voltage :

30V

Drain Current-Max (Abs) (ID) :

25A

Continuous Drain Current (ID) :

24A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

3.4W Ta

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.8V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4270pF @ 15V

Peak Reflow Temperature (Cel) :

260

Height :

939.8μm

Fall Time (Typ) :

20 ns

Published :

2008

Length :

6.096mm

Turn-Off Delay Time :

23 ns

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Elements :

1

Rise Time :

48ns

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 25A, 10V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

24A Ta 104A Tc

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Nominal Vgs :

1.8 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Dual Supply Voltage :

30V

Turn On Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Number of Terminations :

3

Lead Free :

Lead Free

Series :

HEXFET®

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-N3

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Mounting Type :

Surface Mount

Width :

5.1mm

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Drain-source On Resistance-Max :

0.0033Ohm

Operating Temperature :

-55°C~150°C TJ