IRFH7182TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 50A, 10V

Terminal Form :

NO LEAD

Pulsed Drain Current-Max (IDM) :

320A

Series :

FASTIRFET™, HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

JESD-30 Code :

R-PDSO-N5

Terminal Position :

Dual

Power Dissipation-Max :

4W Ta 195W Tc

Drain to Source Voltage (Vdss) :

100V

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0039Ohm

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

23A Ta 157A Tc

Published :

2013

Continuous Drain Current (ID) :

157A

Drain Current-Max (Abs) (ID) :

23A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3120pF @ 50V

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

728 mJ