IRFH7004TR2PBF

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Mfr.Part #
IRFH7004TR2PBF
Manufacturer
Infineon Technologies
Package / Case
8-VQFN Exposed Pad
Datasheet
Download
Description
MOSFET N CH 40V 100A PQFN5X6
Stock
30,119
In Stock :
30,119

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
194nC @ 10V
Mounting Type :
Surface Mount
Max Power Dissipation :
156W
Gate to Source Voltage (Vgs) :
20V
REACH SVHC :
No SVHC
Rise Time :
51ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
3.9V @ 150μA
Continuous Drain Current (ID) :
100A
Rds On (Max) @ Id, Vgs :
1.4mOhm @ 100A, 10V
Drain to Source Voltage (Vdss) :
40V
Radiation Hardening :
No
Number of Pins :
5
Published :
2012
Package / Case :
8-VQFN Exposed Pad
Input Capacitance (Ciss) (Max) @ Vds :
6419pF @ 25V
Packaging :
Cut Tape (CT)
Min Operating Temperature :
-55°C
Turn On Delay Time :
15 ns
FET Type :
N-Channel
Mount :
Surface Mount
Series :
HEXFET®, StrongIRFET™
Max Operating Temperature :
150°C
Nominal Vgs :
3 V
Input Capacitance :
6.419nF
Current - Continuous Drain (Id) @ 25°C :
100A Tc
RoHS Status :
RoHS Compliant
Turn-Off Delay Time :
73 ns
Rds On Max :
1.4 mΩ
Supplier Device Package :
8-PQFN (5x6)
Fall Time (Typ) :
49 ns
Datasheets
IRFH7004TR2PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFH7004TR2PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:5, Package / Case:8-VQFN Exposed Pad, IRFH7004TR2PBF pinout, IRFH7004TR2PBF datasheet PDF, IRFH7004TR2PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFH7004TR2PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFH7004TR2PBF


N-Channel Cut Tape (CT) 1.4mOhm @ 100A, 10V 6419pF @ 25V 194nC @ 10V 40V 8-VQFN Exposed Pad

IRFH7004TR2PBF Overview


A device's maximum input capacitance is 6419pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 73 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).

IRFH7004TR2PBF Features


a continuous drain current (ID) of 100A
the turn-off delay time is 73 ns
a 40V drain to source voltage (Vdss)


IRFH7004TR2PBF Applications


There are a lot of Infineon Technologies
IRFH7004TR2PBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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