IRFH6200TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-N5

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

JESD-609 Code :

e3

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Width :

5mm

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Turn On Delay Time :

14 ns

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 4.5V

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

49A Ta 100A Tc

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Mount :

Surface Mount

Power Dissipation-Max :

3.6W Ta 156W Tc

Gate to Source Voltage (Vgs) :

12V

Package / Case :

8-PowerVDFN

Lead Free :

Lead Free

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

0.95m Ω @ 50A, 10V

Pulsed Drain Current-Max (IDM) :

400A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

20V

Drain Current-Max (Abs) (ID) :

45A

Continuous Drain Current (ID) :

100A

Number of Pins :

8

Number of Elements :

1

Threshold Voltage :

800mV

Power Dissipation :

156W

Length :

5.9944mm

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Height :

838.2μm

Fall Time (Typ) :

160 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2004

Radiation Hardening :

No

Transistor Application :

SWITCHING

Turn-Off Delay Time :

140 ns

Rise Time :

74ns

Vgs(th) (Max) @ Id :

1.1V @ 150μA

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

10890pF @ 10V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99