IRFH6200TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.1V @ 150μA

Threshold Voltage :

800mV

Turn-Off Delay Time :

140 ns

Width :

5mm

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

10890pF @ 10V

Radiation Hardening :

No

Rds On Max :

950 μΩ

Published :

2010

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Length :

5.9944mm

Rise Time :

74ns

Power Dissipation :

156W

Packaging :

Cut Tape (CT)

Input Capacitance :

10.89nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Mounting Type :

Surface Mount

Number of Pins :

8

Max Operating Temperature :

150°C

Element Configuration :

Single

Lead Free :

Lead Free

Series :

HEXFET®

Max Power Dissipation :

3.6W

Package / Case :

8-PowerVDFN

Resistance :

1.2mOhm

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

14 ns

Drain to Source Voltage (Vdss) :

20V

Supplier Device Package :

8-PQFN (5x6)

Fall Time (Typ) :

160 ns

Recovery Time :

130 ns

REACH SVHC :

No SVHC

Nominal Vgs :

800 mV

Rds On (Max) @ Id, Vgs :

0.95mOhm @ 50A, 10V

Min Operating Temperature :

-55°C

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

49A Ta 100A Tc

Mount :

Surface Mount

Drain to Source Resistance :

1.2mOhm

Height :

838.2μm

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 4.5V