IRFH5406TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1256pF @ 25V

Drain to Source Resistance :

14.4MOhm

Published :

2011

Package / Case :

8-PowerVDFN

Supplier Device Package :

8-PQFN (5x6)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Radiation Hardening :

No

Turn On Delay Time :

5.4 ns

Height :

810μm

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

8

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Max Power Dissipation :

3.6W

Power Dissipation :

3.6W

Width :

5.0038mm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

40A

Rds On Max :

2.3 mΩ

Turn-Off Delay Time :

12 ns

Nominal Vgs :

2 V

Length :

5mm

Recovery Time :

30 ns

Vgs(th) (Max) @ Id :

4V @ 50μA

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

14.4mOhm @ 24A, 10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Cut Tape (CT)

Threshold Voltage :

4V

Fall Time (Typ) :

3.5 ns

Min Operating Temperature :

-55°C

Rise Time :

8.7ns

Mount :

Surface Mount

Input Capacitance :

1.256nF

Current - Continuous Drain (Id) @ 25°C :

11A Ta 40A Tc

FET Type :

N-Channel