IRFH5306TR2PBF
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- Mfr.Part #
- IRFH5306TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 15A 5X6 PQFN
- Stock
- 1,053
- In Stock ：
- 1,053
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Height :
- 900μm
- Published :
- 2013
- Power Dissipation :
- 3.6W
- Packaging :
- Cut Tape (CT)
- Drain to Source Resistance :
- 8.1mOhm
- Number of Pins :
- 8
- Width :
- 5mm
- Mount :
- Surface Mount
- Series :
- HEXFET®
- Supplier Device Package :
- PQFN (5x6) Single Die
- Fall Time (Typ) :
- 6.1 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Rds On Max :
- 8.1 mΩ
- Threshold Voltage :
- 1.8V
- Element Configuration :
- Single
- Input Capacitance :
- 1.125nF
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-PowerVDFN
- FET Type :
- N-Channel
- Turn On Delay Time :
- 9 ns
- Continuous Drain Current (ID) :
- 44A
- Rds On (Max) @ Id, Vgs :
- 8.1mOhm @ 15A, 10V
- Max Operating Temperature :
- 150°C
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1125pF @ 15V
- Mounting Type :
- Surface Mount
- Recovery Time :
- 26 ns
- Rise Time :
- 26ns
- Nominal Vgs :
- 1.8 V
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Max Power Dissipation :
- 3.6W
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 9.1 ns
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta 44A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6mm
- Resistance :
- 8.1mOhm
- Datasheets
- IRFH5306TR2PBF
N-Channel Cut Tape (CT) 8.1mOhm @ 15A, 10V 1125pF @ 15V 12nC @ 4.5V 30V 8-PowerVDFN
IRFH5306TR2PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1125pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [9.1 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 8.1mOhm.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).
IRFH5306TR2PBF Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.1 ns
single MOSFETs transistor is 8.1mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFH5306TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5306TR2PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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