IRFH5304TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

22A Ta 79A Tc

Fall Time (Typ) :

6.6 ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Power Dissipation :

3.6W

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2360pF @ 10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

25ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

12 Weeks

Nominal Vgs :

2.35 V

Height :

838.2μm

JESD-30 Code :

R-PDSO-N5

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Transistor Application :

SWITCHING

Turn On Delay Time :

13 ns

Terminal Finish :

Matte Tin (Sn)

Length :

5.9944mm

Package / Case :

8-PowerVDFN

Series :

HEXFET®

Vgs (Max) :

±20V

Width :

5mm

ECCN Code :

EAR99

Number of Terminations :

5

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

79A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Power Dissipation-Max :

3.6W Ta 46W Tc

REACH SVHC :

No SVHC

Mount :

Surface Mount

Turn-Off Delay Time :

12 ns

Avalanche Energy Rating (Eas) :

46 mJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Resistance :

4.5mOhm

Pulsed Drain Current-Max (IDM) :

320A

Published :

2009

Drain Current-Max (Abs) (ID) :

22A

Number of Elements :

1

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 47A, 10V

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V