IRFH5250TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

19 ns

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Number of Pins :

8

Series :

HEXFET®

Length :

5.9944mm

Continuous Drain Current (ID) :

100A

Power Dissipation-Max :

3.6W Ta 160W Tc

Package / Case :

8-PowerVDFN

Factory Lead Time :

19 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

1.15m Ω @ 50A, 10V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

JESD-30 Code :

R-PDSO-N5

Threshold Voltage :

1.8V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

45A Ta 100A Tc

Number of Terminations :

5

FET Type :

N-Channel

Case Connection :

DRAIN

Height :

838.2μm

Nominal Vgs :

1.8 V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

400A

Published :

2005

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Width :

5mm

Transistor Application :

SWITCHING

Resistance :

1.75MOhm

Mount :

Surface Mount

Turn-Off Delay Time :

30 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Number of Elements :

1

Drain to Source Breakdown Voltage :

25V

Lead Free :

Lead Free

Turn On Delay Time :

28 ns

Input Capacitance (Ciss) (Max) @ Vds :

7174pF @ 13V

Drain Current-Max (Abs) (ID) :

45A

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Rise Time :

46ns

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Power Dissipation :

3.6W