IRFH5215TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

58mOhm

Height :

850μm

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

150V

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 100µA

Series :

HEXFET®

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

58mOhm @ 16A, 10V

Package / Case :

8-VQFN Exposed Pad

Width :

5mm

Continuous Drain Current (ID) :

5A

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

11 ns

Recovery Time :

60 ns

Drain to Source Voltage (Vdss) :

150V

Power Dissipation :

3.6W

Fall Time (Typ) :

2.9 ns

Published :

2011

FET Type :

N-Channel

Rds On Max :

58 mΩ

Max Power Dissipation :

3.6W

Rise Time :

6.3ns

Input Capacitance :

1.35nF

Number of Elements :

1

Supplier Device Package :

PQFN (5x6)

Length :

6mm

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

5A Ta 27A Tc

Turn On Delay Time :

6.7 ns

Mount :

Surface Mount

Number of Pins :

8

Drain to Source Resistance :

58mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

5 V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 50V

Max Operating Temperature :

150°C

Element Configuration :

Single