IRFH5207TRPBF
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- Mfr.Part #
- IRFH5207TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 13A/71A 8PQFN
- Stock
- 21,030
- In Stock ：
- 21,030
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerVDFN
- Continuous Drain Current (ID) :
- 71A
- ECCN Code :
- EAR99
- Number of Terminations :
- 5
- Contact Plating :
- Tin
- Height :
- 838.2μm
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 75V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 3.6W Ta 105W Tc
- Length :
- 5.9944mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 20 ns
- Published :
- 2010
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2474pF @ 25V
- Width :
- 5mm
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 71A Tc
- Series :
- HEXFET®
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 9.6m Ω @ 43A, 10V
- Rise Time :
- 12ns
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PDSO-N5
- Power Dissipation :
- 3.6W
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Resistance :
- 9.6mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 7.1 ns
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 7.2 ns
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Datasheets
- IRFH5207TRPBF
N-Channel Tape & Reel (TR) 9.6m Ω @ 43A, 10V ±20V 2474pF @ 25V 59nC @ 10V 8-PowerVDFN
IRFH5207TRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2474pF @ 25V.This device has a continuous drain current (ID) of [71A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IRFH5207TRPBF Features
a continuous drain current (ID) of 71A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 20 ns
IRFH5207TRPBF Applications
There are a lot of Infineon Technologies
IRFH5207TRPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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