IRFH5207TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

5.9944mm

Packaging :

Cut Tape (CT)

Turn-Off Delay Time :

20 ns

Input Capacitance :

2.474nF

Rds On (Max) @ Id, Vgs :

9.6mOhm @ 43A, 10V

Supplier Device Package :

8-PQFN (5x6)

Rds On Max :

9.6 mΩ

FET Type :

N-Channel

Height :

838.2μm

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

13A Ta 71A Tc

Nominal Vgs :

2 V

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Number of Pins :

8

Mounting Type :

Surface Mount

Series :

HEXFET®

Fall Time (Typ) :

7.1 ns

Drain to Source Voltage (Vdss) :

75V

Package / Case :

8-PowerVDFN

Power Dissipation :

3.6W

Threshold Voltage :

2V

Width :

5mm

Rise Time :

12ns

Min Operating Temperature :

-55°C

Max Power Dissipation :

3.6W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

71A

Element Configuration :

Single

Radiation Hardening :

No

Number of Elements :

1

Turn On Delay Time :

7.2 ns

Drain to Source Resistance :

9.6mOhm

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2474pF @ 25V

Drain to Source Breakdown Voltage :

75V

Published :

2007

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 100µA

Recovery Time :

39 ns