IRFH5206TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.7mOhm @ 50A, 10V

Max Power Dissipation :

3.6W

Length :

5.9944mm

Drain to Source Resistance :

6.7mOhm

Supplier Device Package :

8-PQFN (5x6)

Width :

5mm

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 100µA

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Height :

838.2μm

REACH SVHC :

No SVHC

Series :

HEXFET®

Recovery Time :

39 ns

Number of Elements :

1

Package / Case :

8-PowerVDFN

Input Capacitance (Ciss) (Max) @ Vds :

2490pF @ 25V

Nominal Vgs :

4 V

Input Capacitance :

2.49nF

Power Dissipation :

100W

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 89A Tc

Fall Time (Typ) :

8.2 ns

Number of Pins :

8

Turn-Off Delay Time :

22 ns

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Rise Time :

11ns

Drain to Source Breakdown Voltage :

60V

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Published :

2010

Rds On Max :

6.7 mΩ

Turn On Delay Time :

6.4 ns

Drain to Source Voltage (Vdss) :

60V

Radiation Hardening :

No

Element Configuration :

Single

Continuous Drain Current (ID) :

89A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)