IRFH5204TR2PBF
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- Mfr.Part #
- IRFH5204TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-VQFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 22A PQFN
- Stock
- 4,964
- In Stock ：
- 4,964
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 8.4 ns
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Package / Case :
- 8-VQFN Exposed Pad
- Input Capacitance (Ciss) (Max) @ Vds :
- 2460pF @ 25V
- Drain to Source Voltage (Vdss) :
- 40V
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta 100A Tc
- Published :
- 2011
- Min Operating Temperature :
- -55°C
- Rise Time :
- 14ns
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- PQFN (5x6)
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 22A
- Power Dissipation :
- 3.6W
- Lead Free :
- Lead Free
- Length :
- 6mm
- Width :
- 5mm
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Recovery Time :
- 45 ns
- Rds On Max :
- 4.3 mΩ
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 4.3mOhm
- Max Power Dissipation :
- 3.6W
- Rds On (Max) @ Id, Vgs :
- 4.3mOhm @ 50A, 10V
- Drain to Source Breakdown Voltage :
- 40V
- Fall Time (Typ) :
- 8.3 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 4.3mOhm
- Height :
- 900μm
- Packaging :
- Cut Tape (CT)
- Turn-Off Delay Time :
- 18 ns
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 2.46nF
- Nominal Vgs :
- 4 V
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Number of Elements :
- 1
- Datasheets
- IRFH5204TR2PBF
N-Channel Cut Tape (CT) 4.3mOhm @ 50A, 10V 2460pF @ 25V 65nC @ 10V 40V 8-VQFN Exposed Pad
IRFH5204TR2PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2460pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.This device has a drain-to-source resistance of 4.3mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).
IRFH5204TR2PBF Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 4.3mOhm
a threshold voltage of 4V
a 40V drain to source voltage (Vdss)
IRFH5204TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5204TR2PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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