IRFH5106TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

8.1 ns

Fall Time (Typ) :

9.5 ns

Rds On (Max) @ Id, Vgs :

5.6mOhm @ 50A, 10V

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Power Dissipation :

114W

Rise Time :

13ns

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Length :

5.9944mm

Input Capacitance (Ciss) (Max) @ Vds :

3090pF @ 25V

Supplier Device Package :

8-PQFN (5x6)

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

21A Ta 100A Tc

Width :

5mm

Continuous Drain Current (ID) :

100A

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Max Operating Temperature :

150°C

Drain to Source Resistance :

5.6MOhm

Drain to Source Voltage (Vdss) :

60V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerVDFN

Turn-Off Delay Time :

23 ns

Rds On Max :

4.3 mΩ

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Published :

2010

Max Power Dissipation :

3.6W

Height :

838.2μm

Recovery Time :

42 ns

Packaging :

Cut Tape (CT)

Number of Elements :

1

FET Type :

N-Channel

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

Input Capacitance :

2.46nF