IRFH5053TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Rise Time :

14.6ns

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

9.3A

FET Type :

N-Channel

Terminal Form :

NO LEAD

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

3.1W

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

75A

Published :

2005

Case Connection :

DRAIN

Length :

5.9944mm

Threshold Voltage :

3.7V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

9.3A Ta 46A Tc

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

9.9 ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Turn-Off Delay Time :

18 ns

Lead Free :

Lead Free

Package / Case :

8-PowerVDFN

JESD-30 Code :

R-PDSO-N3

Mount :

Surface Mount

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Nominal Vgs :

3.7 V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

Series :

HEXFET®

Turn On Delay Time :

8.6 ns

Factory Lead Time :

12 Weeks

Height :

939.8μm

Continuous Drain Current (ID) :

9.3mA

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.1W Ta 8.3W Tc

Vgs(th) (Max) @ Id :

4.9V @ 100μA

JESD-609 Code :

e3

Width :

5mm

Rds On (Max) @ Id, Vgs :

18m Ω @ 9.3A, 10V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V