IRFH5025TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

6.3ns

Fall Time (Typ) :

6.1 ns

Published :

2012

Package / Case :

8-PowerVDFN

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

320 mJ

Turn-Off Delay Time :

17 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Series :

HEXFET®

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Transistor Element Material :

SILICON

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Case Connection :

DRAIN

Power Dissipation-Max :

3.6W Ta 8.3W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

838.2μm

Vgs(th) (Max) @ Id :

5V @ 150μA

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

46A

Width :

5mm

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-N5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

32A

Threshold Voltage :

5V

Number of Terminations :

5

Number of Pins :

8

JESD-609 Code :

e3

Length :

5.9944mm

Drain to Source Breakdown Voltage :

250V

Rds On (Max) @ Id, Vgs :

100m Ω @ 5.7A, 10V

Lead Free :

Lead Free

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Power Dissipation :

3.6W

Turn On Delay Time :

9 ns