IRFH5025TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 150μA

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Fall Time (Typ) :

6.1 ns

Published :

2013

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

250V

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Package / Case :

8-PowerVDFN

Max Operating Temperature :

150°C

Threshold Voltage :

20V

Power Dissipation :

3.6W

Drain to Source Resistance :

100MOhm

Rds On (Max) @ Id, Vgs :

100mOhm @ 5.7A, 10V

Radiation Hardening :

No

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

250V

Recovery Time :

83 ns

Width :

5mm

Max Power Dissipation :

3.6W

Input Capacitance :

2.15nF

Height :

838.2μm

REACH SVHC :

No SVHC

Turn On Delay Time :

9 ns

Rise Time :

6.3ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

20 V

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 50V

Number of Elements :

1

Turn-Off Delay Time :

17 ns

Supplier Device Package :

8-PQFN (5x6)

Rds On Max :

100 mΩ

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Length :

5.9944mm

Continuous Drain Current (ID) :

32A