IRFH5020TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

43A

Recovery Time :

69 ns

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 100V

Package / Case :

8-PowerVDFN

Packaging :

Cut Tape (CT)

Resistance :

55mOhm

Input Capacitance :

2.29nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

7.7ns

Length :

5.9944mm

Max Operating Temperature :

150°C

Radiation Hardening :

No

Rds On Max :

55 mΩ

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Max Power Dissipation :

3.6W

Published :

2013

Mounting Type :

Surface Mount

Nominal Vgs :

5 V

Element Configuration :

Single

Fall Time (Typ) :

6 ns

Drain to Source Voltage (Vdss) :

200V

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

5V @ 150μA

Turn On Delay Time :

9.3 ns

Rds On (Max) @ Id, Vgs :

55mOhm @ 7.5A, 10V

FET Type :

N-Channel

Width :

5mm

Lead Free :

Lead Free

Supplier Device Package :

8-PQFN (5x6)

Drain to Source Breakdown Voltage :

200V

REACH SVHC :

No SVHC

Height :

838.2μm

Threshold Voltage :

5V

Number of Pins :

8

Mount :

Surface Mount

Drain to Source Resistance :

55mOhm

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Turn-Off Delay Time :

21 ns

RoHS Status :

RoHS Compliant

Number of Elements :

1

Power Dissipation :

8.3W

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®