IRFH5015TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

31m Ω @ 34A, 10V

Mount :

Surface Mount

Turn On Delay Time :

9.4 ns

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

5V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

10A Ta 56A Tc

Rise Time :

9.7ns

Number of Terminations :

5

Drain to Source Breakdown Voltage :

150V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

56A

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

3.6W

JESD-609 Code :

e3

Series :

HEXFET®

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 50V

Published :

2011

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

220A

Power Dissipation-Max :

3.6W Ta 156W Tc

Width :

5.15mm

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

3.4 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

6.1468mm

JESD-30 Code :

R-PDSO-N5

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

230 mJ

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 150μA

Height :

900μm

Turn-Off Delay Time :

14 ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Package / Case :

8-PowerTDFN

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1