IRFH5010TRPBF
- Mfr.Part #
- IRFH5010TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 13A/100A 8PQFN
- Stock
- 16,329
- In Stock :
- 16,329
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 100A
- Nominal Vgs :
- 2 V
- Fall Time (Typ) :
- 8.6 ns
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 27 ns
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 5
- Avalanche Energy Rating (Eas) :
- 227 mJ
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5.9944mm
- Width :
- 5.0038mm
- Published :
- 2011
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PDSO-N5
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4340pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerVDFN
- Series :
- HEXFET®
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Threshold Voltage :
- 2V
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Turn On Delay Time :
- 9 ns
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Resistance :
- 9mOhm
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 50A, 10V
- Drain to Source Breakdown Voltage :
- 100V
- Height :
- 838.2μm
- Rise Time :
- 12ns
- Power Dissipation :
- 250W
- Power Dissipation-Max :
- 3.6W Ta 250W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 100A Tc
- Number of Elements :
- 1
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRFH5010TRPBF

N-Channel Tape & Reel (TR) 9m Ω @ 50A, 10V ±20V 4340pF @ 25V 98nC @ 10V 8-PowerVDFN
IRFH5010TRPBF Description
The Fifth Generation HEXFETs from International Rectifier use cutting-edge manufacturing techniques to provide the lowest on-resistance per silicon area possible. When combined with the fast switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, the designer has an extremely efficient device that can be used in a variety of applications. The D-PAK allows for surface mounting via vapor phase, infrared, or wave soldering methods. The straight lead version (IRFU senes) is suitable for through-hole mounting applications. Power dissipation values of up to 1.5 watts are possible in standard surface mount applications.
IRFH5010TRPBF Features
-
RDSon is low (v 9 m) (2)
-
Low PCB Thermal Resistance (vO5°C/W)
-
Rg was evaluated in its entirety.
-
(v09 mm) Low Profile
-
Pinout in dirty Sta ridard
-
Compatible with Current Surface Mounting Methodologies
-
Compliant with RoHS MSL1 is free of lead, bromide, and halogens.
-
Qualification in the Workplace
IRFH5010TRPBF Applications
? Synchronous Rectification on the Secondary Side
? Inverters for DC Motors (Inverters for DC Motors)
? Applications for DC-DC Bricks
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