IRFH5010TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

8.6 ns

Packaging :

Cut Tape (CT)

Published :

2010

Recovery Time :

51 ns

Element Configuration :

Single

Supplier Device Package :

8-PQFN (5x6)

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

100V

Turn On Delay Time :

9 ns

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Height :

838.2μm

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Length :

5.9944mm

Current - Continuous Drain (Id) @ 25°C :

13A Ta 100A Tc

Radiation Hardening :

No

Rise Time :

12ns

Rds On Max :

9 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

9mOhm @ 50A, 10V

Threshold Voltage :

4V

Power Dissipation :

250W

Input Capacitance :

4.34nF

Max Power Dissipation :

3.6W

Vgs(th) (Max) @ Id :

4V @ 150μA

Width :

5mm

Package / Case :

8-PowerVDFN

Turn-Off Delay Time :

27 ns

Number of Pins :

8

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 25V

Nominal Vgs :

4 V

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

100A

Drain to Source Resistance :

9mOhm

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V