IRFH5007TR2PBF
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- Mfr.Part #
- IRFH5007TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 17A 5X6 PQFN
- Stock
- 29,708
- In Stock ：
- 29,708
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Drain to Source Resistance :
- 5.9mOhm
- Max Operating Temperature :
- 150°C
- Rise Time :
- 14ns
- Supplier Device Package :
- 8-PQFN (5x6)
- Rds On Max :
- 5.9 mΩ
- Length :
- 6.1468mm
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- RoHS Status :
- RoHS Compliant
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Recovery Time :
- 47 ns
- Nominal Vgs :
- 4 V
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Published :
- 2010
- Packaging :
- Cut Tape (CT)
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Fall Time (Typ) :
- 11 ns
- Series :
- HEXFET®
- Max Power Dissipation :
- 3.6W
- Turn On Delay Time :
- 10 ns
- Lead Free :
- Lead Free
- Width :
- 5.15mm
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 75V
- Rds On (Max) @ Id, Vgs :
- 5.9mOhm @ 50A, 10V
- Power Dissipation :
- 3.6W
- Continuous Drain Current (ID) :
- 100A
- Turn-Off Delay Time :
- 30 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Height :
- 990.6μm
- Resistance :
- 5.9mOhm
- Input Capacitance :
- 4.29nF
- Threshold Voltage :
- 4V
- Drain to Source Voltage (Vdss) :
- 75V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4290pF @ 25V
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 100A Tc
- Package / Case :
- 8-PowerTDFN
- Datasheets
- IRFH5007TR2PBF
N-Channel Cut Tape (CT) 5.9mOhm @ 50A, 10V 4290pF @ 25V 98nC @ 10V 75V 8-PowerTDFN
IRFH5007TR2PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4290pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 5.9mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 75V is required between drain and source (Vdss).
IRFH5007TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 5.9mOhm
a threshold voltage of 4V
a 75V drain to source voltage (Vdss)
IRFH5007TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5007TR2PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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