IRFH5006TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Width :

5.15mm

Number of Elements :

1

Threshold Voltage :

4V

Power Dissipation :

3.6W

Turn-Off Delay Time :

30 ns

Rise Time :

13ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4175pF @ 30V

Package / Case :

8-PowerTDFN

Drain to Source Resistance :

4.1mOhm

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Pins :

8

Turn On Delay Time :

9.6 ns

Current - Continuous Drain (Id) @ 25°C :

21A Ta 100A Tc

Max Operating Temperature :

150°C

Length :

6.1468mm

Continuous Drain Current (ID) :

100A

Packaging :

Cut Tape (CT)

Height :

990.6μm

Supplier Device Package :

8-PQFN (5x6)

Recovery Time :

42 ns

Input Capacitance :

4.175nF

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

4.1mOhm @ 50A, 10V

Min Operating Temperature :

-55°C

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

3.6W

Nominal Vgs :

4 V

FET Type :

N-Channel

Rds On Max :

4.1 mΩ

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V