IRF9Z34STRR
- Mfr.Part #
- IRF9Z34STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 18A D2PAK
- Stock
- 6,104
- In Stock :
- 6,104
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Fall Time (Typ) :
- 58 ns
- Drain to Source Resistance :
- 140mOhm
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 140mOhm @ 11A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 140 mΩ
- Height :
- 4.83mm
- Mount :
- Surface Mount
- Published :
- 2016
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- D2PAK
- Rise Time :
- 120ns
- Turn On Delay Time :
- 18 ns
- RoHS Status :
- Non-RoHS Compliant
- Lead Free :
- Contains Lead
- Length :
- 10.67mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 1.1nF
- Max Operating Temperature :
- 175°C
- FET Type :
- P-Channel
- Weight :
- 1.437803g
- Power Dissipation-Max :
- 3.7W Ta 88W Tc
- Drain to Source Breakdown Voltage :
- -60V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 18A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current Rating :
- -18A
- Width :
- 9.65mm
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 20 ns
- Voltage - Rated DC :
- -60V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Datasheets
- IRF9Z34STRR
P-Channel Tape & Reel (TR) 140mOhm @ 11A, 10V ±20V 1100pF @ 25V 34nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z34STRR Overview
A device's maximum input capacitance is 1100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 18A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-60V, and this device has a drain-to-source breakdown voltage of -60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 140mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF9Z34STRR Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a 60V drain to source voltage (Vdss)
IRF9Z34STRR Applications
There are a lot of Vishay Siliconix
IRF9Z34STRR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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