IRF9Z34STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-60V

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Mount :

Surface Mount

FET Type :

P-Channel

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Width :

9.65mm

Length :

10.67mm

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Continuous Drain Current (ID) :

18A

Power Dissipation-Max :

3.7W Ta 88W Tc

Radiation Hardening :

No

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Fall Time (Typ) :

58 ns

Weight :

1.437803g

Power Dissipation :

3.7W

Resistance :

140mOhm

Pulsed Drain Current-Max (IDM) :

72A

Height :

4.83mm

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

18 ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

20 ns

Rise Time :

120ns

Pin Count :

4

Published :

2013

Contact Plating :

Tin

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

140m Ω @ 11A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE