IRF9Z34NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

175°C

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

-19A

Resistance :

100MOhm

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Rise Time :

55ns

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-55V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Continuous Drain Current (ID) :

-19A

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

ECCN Code :

EAR99

Threshold Voltage :

-2V

Nominal Vgs :

-4 V

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

-55V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Gate to Source Voltage (Vgs) :

20V

Height :

4.83mm

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Width :

9.65mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

30 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

68A

REACH SVHC :

No SVHC

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Power Dissipation-Max :

3.8W Ta 68W Tc

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Fall Time (Typ) :

41 ns

Number of Channels :

1

Recovery Time :

82 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Length :

10.668mm

Lead Free :

Contains Lead, Lead Free

Turn On Delay Time :

13 ns

Power Dissipation :

68W

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Dual Supply Voltage :

55V

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Published :

1997

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Vgs (Max) :

±20V

Mounting Type :

Surface Mount