IRF9Z34NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

-55V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

-4V

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Number of Terminations :

3

Termination :

Through Hole

Fall Time (Typ) :

41 ns

Recovery Time :

82 ns

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Number of Elements :

1

Current Rating :

-19A

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

56W

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

ECCN Code :

EAR99

Height :

8.77mm

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Power Dissipation-Max :

68W Tc

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

250

Length :

10.5156mm

Package / Case :

TO-220-3

Voltage - Rated DC :

-55V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

55V

Contact Plating :

Tin

Dual Supply Voltage :

-55V

Pulsed Drain Current-Max (IDM) :

68A

Packaging :

Tube

Mount :

Through Hole

Resistance :

100MOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

-19A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Published :

1997

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Rise Time :

55ns

Nominal Vgs :

-4 V

Width :

4.69mm

Lead Pitch :

2.54mm

Turn On Delay Time :

13 ns

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Turn-Off Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)