IRF9Z34NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSIP-T3

FET Type :

P-Channel

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Vgs (Max) :

±20V

Number of Terminations :

3

Mounting Type :

Through Hole

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tube

Series :

HEXFET®

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

3.8W Ta 68W Tc

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Drain Current-Max (Abs) (ID) :

19A

Pulsed Drain Current-Max (IDM) :

68A

Published :

1997

Avalanche Energy Rating (Eas) :

180 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.1Ohm