IRF9Z30PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

50V

Number of Channels :

1

Number of Terminations :

3

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-50V

Number of Pins :

3

Number of Elements :

1

JESD-609 Code :

e3

Threshold Voltage :

-4V

Packaging :

Tube

Mount :

Through Hole

Pin Count :

3

Length :

10.41mm

Rise Time :

110ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Turn On Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Power Dissipation-Max :

74W Tc

Operating Mode :

ENHANCEMENT MODE

Resistance :

140mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

18A

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

REACH SVHC :

Unknown

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

140m Ω @ 9.3A, 10V

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

60A

Turn-Off Delay Time :

21 ns

Factory Lead Time :

8 Weeks

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

74W

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

9.01mm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Width :

4.7mm

Pbfree Code :

yes

Fall Time (Typ) :

64 ns

Published :

2007