IRF9Z10PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Element Configuration :

Single

Published :

2014

Power Dissipation-Max :

43W Tc

Mount :

Through Hole

Fall Time (Typ) :

31 ns

REACH SVHC :

Unknown

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

10 ns

Weight :

6.000006g

Height :

9.01mm

Power Dissipation :

43W

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-220AB

Radiation Hardening :

No

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

6.7A

Rds On (Max) @ Id, Vgs :

500mOhm @ 4A, 10V

Rise Time :

63ns

Number of Channels :

1

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

-4V

Mounting Type :

Through Hole

Number of Elements :

1

Width :

4.7mm

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Turn On Delay Time :

11 ns

Drain to Source Resistance :

500MOhm

Package / Case :

TO-220-3

Rds On Max :

500 mΩ

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Packaging :

Tube

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.41mm

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

11 Weeks

Input Capacitance :

270pF