IRF9620PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

9.01mm

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

Radiation Hardening :

No

Weight :

6.000006g

REACH SVHC :

Unknown

Input Capacitance :

350pF

Rise Time :

25ns

Nominal Vgs :

-4 V

Length :

10.41mm

Voltage - Rated DC :

-200V

Package / Case :

TO-220-3

Number of Channels :

1

Width :

4.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

1.5 Ω

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

-4V

Power Dissipation-Max :

40W Tc

Recovery Time :

450 ns

Published :

2009

Supplier Device Package :

TO-220AB

Drain to Source Breakdown Voltage :

-200V

Vgs (Max) :

±20V

Power Dissipation :

40W

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Drain to Source Resistance :

1.5Ohm

Mounting Type :

Through Hole

Current Rating :

-3.5A

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55°C

Element Configuration :

Single

Resistance :

1.5Ohm

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Turn On Delay Time :

15 ns

Fall Time (Typ) :

15 ns

Number of Elements :

1

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.5A, 10V

Mount :

Through Hole

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Continuous Drain Current (ID) :

-3.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

20 ns