IRF9540NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 140W Tc

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.117Ohm

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

92A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

117m Ω @ 11A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Rise Time :

67ns

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Voltage - Rated DC :

-100V

Terminal Position :

Single

Mount :

Surface Mount

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Current Rating :

-23A

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

84 mJ

Published :

2003

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

23A