IRF9540NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

210 ns

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

-100V

Length :

10.668mm

Rds On (Max) @ Id, Vgs :

117m Ω @ 14A, 10V

Rise Time :

67ns

Factory Lead Time :

12 Weeks

Termination :

SMD/SMT

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 25V

Turn On Delay Time :

13 ns

Height :

5.084mm

Number of Channels :

1

Mount :

Surface Mount

Fall Time (Typ) :

51 ns

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Lead Free :

Contains Lead

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current :

23A

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

-4 V

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

-100V

Published :

2003

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Number of Pins :

3

Voltage :

100V

Number of Elements :

1

Case Connection :

DRAIN

Threshold Voltage :

-4V

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Width :

9.65mm

Current Rating :

-23A

Continuous Drain Current (ID) :

-23A

Dual Supply Voltage :

100V

Avalanche Energy Rating (Eas) :

84 mJ

Power Dissipation-Max :

3.1W Ta 110W Tc

Resistance :

117mOhm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Turn-Off Delay Time :

40 ns

Number of Terminations :

2

Power Dissipation :

3.8W

Mounting Type :

Surface Mount

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant