IRF9540NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

117m Ω @ 14A, 10V

Current :

23A

Number of Channels :

1

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Length :

10.668mm

Number of Pins :

3

Radiation Hardening :

No

Turn-Off Delay Time :

40 ns

Nominal Vgs :

-4 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation-Max :

3.1W Ta 110W Tc

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Height :

5.084mm

Recovery Time :

210 ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Voltage :

100V

Resistance :

117mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

-100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

3.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

ECCN Code :

EAR99

Current Rating :

-23A

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

13 ns

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Dual Supply Voltage :

100V

Lead Free :

Contains Lead

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 25V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

84 mJ

REACH SVHC :

No SVHC

Width :

9.65mm

Continuous Drain Current (ID) :

-23A

Termination :

SMD/SMT

Threshold Voltage :

-4V

Contact Plating :

Tin

Published :

2003

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Rise Time :

67ns

Voltage - Rated DC :

-100V

Fall Time (Typ) :

51 ns