IRF9540NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

92A

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

100V

Series :

HEXFET®

Drain-source On Resistance-Max :

0.117Ohm

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

84 mJ

Rds On (Max) @ Id, Vgs :

117m Ω @ 14A, 10V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2003

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Current - Continuous Drain (Id) @ 25°C :

23A Tc

FET Type :

P-Channel

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 25V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Surface Mount :

yes

Power Dissipation-Max :

3.1W Ta 110W Tc

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

23A

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE