IRF9540NLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

-100V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

117m Ω @ 14A, 10V

Mounting Type :

Through Hole

Height :

9.65mm

FET Type :

P-Channel

Avalanche Energy Rating (Eas) :

84 mJ

Number of Pins :

3

Transistor Element Material :

SILICON

Number of Terminations :

3

Published :

2005

Termination :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Resistance :

117mOhm

Continuous Drain Current (ID) :

-23A

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

92A

Nominal Vgs :

4 V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

51 ns

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 25V

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Vgs (Max) :

±20V

Dual Supply Voltage :

100V

Power Dissipation :

3.1W

Width :

4.826mm

Rise Time :

67ns

Turn-Off Delay Time :

40 ns

Power Dissipation-Max :

3.1W Ta 110W Tc

Radiation Hardening :

No

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

4V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.668mm

Mount :

Through Hole

Series :

HEXFET®

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free