IRF9530S

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Mfr.Part #
IRF9530S
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 100V 12A D2PAK
Stock
6,700
In Stock :
6,700

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
52ns
Turn-Off Delay Time :
31 ns
Length :
10.67mm
Number of Channels :
1
Mount :
Surface Mount
Rds On Max :
300 mΩ
Supplier Device Package :
D2PAK
Rds On (Max) @ Id, Vgs :
300mOhm @ 7.2A, 10V
Drain to Source Voltage (Vdss) :
100V
Vgs(th) (Max) @ Id :
4V @ 250µA
Weight :
1.437803g
Input Capacitance :
860pF
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current Rating :
-14A
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Drain to Source Resistance :
300mOhm
Continuous Drain Current (ID) :
12A
Max Operating Temperature :
175°C
Min Operating Temperature :
-55°C
Mounting Type :
Surface Mount
Height :
4.83mm
Power Dissipation-Max :
3.7W Ta 88W Tc
Lead Free :
Contains Lead
Published :
2017
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
FET Type :
P-Channel
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Status :
Non-RoHS Compliant
Voltage - Rated DC :
-100V
Input Capacitance (Ciss) (Max) @ Vds :
860pF @ 25V
Turn On Delay Time :
12 ns
Width :
9.65mm
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Element Configuration :
Single
Fall Time (Typ) :
39 ns
Datasheets
IRF9530S
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF9530S from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF9530S pinout, IRF9530S datasheet PDF, IRF9530S amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF9530S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF9530S


P-Channel Tube 300mOhm @ 7.2A, 10V ±20V 860pF @ 25V 38nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF9530S Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 860pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 31 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 300mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF9530S Features


a continuous drain current (ID) of 12A
the turn-off delay time is 31 ns
single MOSFETs transistor is 300mOhm
a 100V drain to source voltage (Vdss)


IRF9530S Applications


There are a lot of Vishay Siliconix
IRF9530S applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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