IRF9530PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

300mOhm

Height :

9.01mm

Power Dissipation :

88W

Lead Free :

Lead Free

Weight :

6.000006g

Number of Channels :

1

Min Operating Temperature :

-55°C

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Number of Elements :

1

Current Rating :

-12A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

31 ns

Package / Case :

TO-220-3

Recovery Time :

240 ns

Threshold Voltage :

-4V

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Power Dissipation-Max :

88W Tc

Continuous Drain Current (ID) :

-12A

Packaging :

Tube

Factory Lead Time :

8 Weeks

Voltage - Rated DC :

-100V

Input Capacitance :

860pF

Turn On Delay Time :

12 ns

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

175°C

Resistance :

300mOhm

Width :

4.7mm

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Rise Time :

52ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Supplier Device Package :

TO-220AB

Rds On (Max) @ Id, Vgs :

300mOhm @ 7.2A, 10V

Length :

10.41mm

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Rds On Max :

300 mΩ

FET Type :

P-Channel

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

-100V

Fall Time (Typ) :

39 ns