IRF9530NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Width :

4.69mm

Contact Plating :

Tin

Height :

15.24mm

Power Dissipation-Max :

79W Tc

Series :

HEXFET®

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

250

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Nominal Vgs :

-4 V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Mount :

Through Hole

Transistor Element Material :

SILICON

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Turn On Delay Time :

15 ns

Element Configuration :

Single

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

200m Ω @ 8.4A, 10V

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

200mOhm

REACH SVHC :

No SVHC

Number of Terminations :

3

Published :

1998

Drain to Source Breakdown Voltage :

-100V

Pulsed Drain Current-Max (IDM) :

56A

Recovery Time :

190 ns

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Lead Pitch :

2.54mm

Turn-Off Delay Time :

45 ns

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

46 ns

Package / Case :

TO-220-3

Threshold Voltage :

-4V

Radiation Hardening :

No

Number of Pins :

3

Packaging :

Tube

Dual Supply Voltage :

-100V

Current Rating :

-14A

Continuous Drain Current (ID) :

-14A

JESD-609 Code :

e3

Power Dissipation :

79W

Voltage - Rated DC :

-100V

Avalanche Energy Rating (Eas) :

250 mJ

Rise Time :

58ns

Termination :

Through Hole

Length :

10.5156mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

FET Type :

P-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY