IRF9510STRR
- Mfr.Part #
- IRF9510STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 4A D2PAK
- Stock
- 6,282
- In Stock :
- 6,282
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- FET Type :
- P-Channel
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 8.7nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 27ns
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Continuous Drain Current (ID) :
- 4A
- Pin Count :
- 4
- Terminal Position :
- Single
- Terminal Form :
- Gull wing
- RoHS Status :
- Non-RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.4A, 10V
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- -100V
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- Current Rating :
- -4A
- Terminal Finish :
- TIN LEAD
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 16A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2016
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- HTS Code :
- 8541.29.00.95
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e0
- Reach Compliance Code :
- Unknown
- Drain Current-Max (Abs) (ID) :
- 4A
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Transistor Application :
- SWITCHING
- Datasheets
- IRF9510STRR
P-Channel Tape & Reel (TR) 1.2 Ω @ 2.4A, 10V ±20V 200pF @ 25V 8.7nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9510STRR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.A device can conduct a maximum continuous current of [4A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 16A.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF9510STRR Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 16A.
a 100V drain to source voltage (Vdss)
IRF9510STRR Applications
There are a lot of Vishay Siliconix
IRF9510STRR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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