IRF9410TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

70 mJ

Transistor Element Material :

SILICON

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Published :

1997

Pulsed Drain Current-Max (IDM) :

37A

Drain-source On Resistance-Max :

0.03Ohm

Drain to Source Voltage (Vdss) :

30V

JEDEC-95 Code :

MS-012AA

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Power Dissipation-Max :

2.5W Ta

DS Breakdown Voltage-Min :

30V

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 10V

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G8

Number of Elements :

1

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Number of Terminations :

8

Qualification Status :

Not Qualified