IRF9410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.03Ohm

Avalanche Energy Rating (Eas) :

70 mJ

Published :

1997

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Surface Mount :

yes

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Number of Terminations :

8

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

7A

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Terminal Form :

Gull wing

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

JEDEC-95 Code :

MS-012AA

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250μA

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

37A

RoHS Status :

ROHS3 Compliant