IRF9393TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

13.3m Ω @ 9.2A, 20V

Published :

2010

Number of Pins :

8

Fall Time (Typ) :

49 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V 20V

Pulsed Drain Current-Max (IDM) :

75A

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Element Configuration :

Single

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

9.2A

Series :

HEXFET®

Length :

4.9784mm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

Number of Terminations :

8

Turn On Delay Time :

16 ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Height :

1.4986mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

55 ns

Width :

3.9878mm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Rise Time :

44ns

Drain to Source Breakdown Voltage :

-30V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Position :

Dual