IRF8788PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Termination :

SMD/SMT

Number of Terminations :

8

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

Resistance :

2.8MOhm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

24A

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

24ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.5mm

REACH SVHC :

No SVHC

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

23 ns

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Vgs (Max) :

±20V

Published :

2005

Turn On Delay Time :

23 ns

Width :

4mm

Avalanche Energy Rating (Eas) :

230 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5720pF @ 15V

FET Type :

N-Channel

Fall Time (Typ) :

11 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation-Max :

2.5W Ta

Dual Supply Voltage :

30V

Transistor Application :

SWITCHING

Threshold Voltage :

1.8V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 24A, 10V

Packaging :

Tube

Terminal Position :

Dual

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Length :

5mm

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Recovery Time :

36 ns

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

24A Ta

Nominal Vgs :

1.8 V