IRF8736TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Turn On Delay Time :

12 ns

Rise Time :

15ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

30V

Width :

3.9878mm

Length :

4.9784mm

Nominal Vgs :

1.8 V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Height :

1.4986mm

Resistance :

4.8mOhm

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

1.8V

Power Dissipation-Max :

2.5W Ta

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 18A, 10V

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Number of Terminations :

8

Turn-Off Delay Time :

13 ns

Transistor Application :

SWITCHING

Number of Pins :

8

Fall Time (Typ) :

7.5 ns

Current - Continuous Drain (Id) @ 25°C :

18A Ta

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Mount :

Surface Mount

Continuous Drain Current (ID) :

18A

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2315pF @ 15V

Radiation Hardening :

No

Element Configuration :

Single

Series :

HEXFET®

Published :

2007

Terminal Position :

Dual